The objective of this activity is to design, manufacture and test Ka-band high efficiency amplifier monolithic microwave integratedcircuit (MMIC) based on silicon technology for user terminals. Targeted Improvements:- Amplifier power added efficiency above 30% with a noise power ratio of 15 dB minimum- Key building block for future highly integrated Ka-band user terminal active antennas. Description:The satcom market requires highly integrated solutions for consumer user terminals. Silicon technology allows for the high integration and for high volume production but, until recently, it suffered from limited RF performance at high frequencies in comparison to more conventional Gallium Arsenide (GaAs) or even Gallium Nitride (GaN) technology. The progress of silicon technology has now extended its frequency coverage towards millimetre-waves though the power added efficiency (PAE) of the amplifiers remains below what can be achieved with GaAs. A good PAE is a key driver in the design of active array antennas for user terminal, since it directly impacts the thermal management of the antenna, which can lead to costly solutions not compatible with the consumer market. The improved efficiency can be addressed by a careful implementation of innovative architectures as demonstrated in recent publications. The activity will design, manufacture and test a Ka-band high efficiency amplifier monolithic microwave integrated circuit based on silicon technology with a PAE above 30% at a noise power ratio of 15dB minimum. Footnote: On Delegation Request activities will only be initiated on the explicit request of at least one National Delegation. Procurement Policy: C(1) = Activity restricted to non-prime contractors (incl. SMEs). For additional information please go to: http://www.esa.int/About_Us/Business_with_ESA/Small_and_Medium_Sized_En…

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