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StatusCompleted
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Status date2021-01-11
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Activity Code5C.290
Telecom payloads and satellites are strategic for Thales Alenia Space. The choice of internal development of SSPA has been done to control and accurately monitor critical items, such as performances (output power, power consumption & dissipation, linearity, mass), technologies and costs.
Thales Alenia Space wanted to speed up the introduction of the European GaN technology according to a vertical housing approach for own new generation of SSPA.
Thanks to this new C-band LC-SSPA EQM, Thales Alenia Space has increased its market share for Telecom applications.
For C-band applications, the main challenge resides to propose a really competitive LC-SSPA compared to TWTA solution regarding to the mass, footprint, output power and power added efficiency.
So, the challenges have been focused on management of the high power RF section and power dissipation capability in a stringent volume.
Thanks to this new C-band LC-SSPA, Thales Alenia Space increases its market share for Telecom applications.
The following table shows the main benefits of this product compared to LC- TWTA solution:
Parameters | LC-SSPA | LC-TWTA |
Frequency band | 3.7-4.2GHz | 3.7-4.2GHz |
Typical Power class | 90W | 90W |
Power class capability | up to 126W | up to 150W |
Average PAE@sat | 38%(*) | 50/55% |
T° acceptance | 75°C | +60/80°C |
Manufacturing cycle | 12/13 months | 15/16 months |
Footprint | 2.7dm² | 4.6dm² |
Mass | 2kg | 2.7kg |
(*) PAE will be improved thanks to on-going development.
The proposed equipment is consisting in a stand-alone unit composed of :
- a new RF chain including a low level section based on GaAs technology and a high power section based on GaN technology,
- a new EPC section using new techniques, new technologies and new parts with improved thermal capability in order to respond to the vertical constraints and efficiency,
- a new digital TMTC board,
- a new reduced footprint thanks to a vertical housing
EQM C-band GaN SSPA equipment mechanical features
Parameters | Typicals values |
Useful frequency range | 3700 - 4200 MHz |
Frequency Bandwidth | 400MHz |
Typical Reference Input Power (RIP) | -55/-20 dBm |
Typical Reference Output Power (ROP) | 100W |
Averaged PAE | 38% |
NPR | >15dB@-3dBOBO |
Mass | <2kg |
Dimensions (LxWxH) | 281mm x 117mm x 142mm |
Reliability @+40°C | 700 FITS |
Qualification temperature range | -10°C / 80°C |
Modes | FGM/ALC/Mute |
Telemetries | PRF, Ibus, setting |
EQM C-band GaN SSPA performances
The project plan is focused on the development, manufacturing, tests and qualification of the unit:
- Design, manufacturing and test of the GaAs and GaN RF sections
- Design, manufacturing and test of the EPC board
- Design, manufacturing and test of the TMTC board
- Design and manufacturing of the mechanical structure
- PDR / CDR reviews to validate the design
- Qualification of sub-assemblies
- Assembly and tests of the C-Band EM & EQM 100W GaN SSPA
- Final review to validate the development and the electrical performances
All key reviews have been held successfully.
The C-band 100W GaN EQM SSPA has been fully tested and qualified. The product is entering in the commercial phase.
The contract is now closed.