The objective of this project is to develop a dual redundant low noise amplifier (LNA) for the Q/V-band. The reliability of the amplifier is increased by including a second – a cold redundant – LNA into the same module. The LNAs are realized as monolithic millimetre wave integrated circuits (MMIC). In case the active LNA malfunctions, a switch or some other structure performing the same function is employed to select the redundant amplifier into use. The switch needs to be reliable and have a low insertion loss in order to minimize the noise figure of the amplifier module.
A novel dual probe concept together with high performance shunt MMIC SPST switches and MMIC LNAs allows the realization of a reliable dual redundant amplifier module having a noise performance similar to that of a waveguide switch solution, but more compact size and lower cost.
Dual redundant low noise amplifier for Q/V band
Operating band: 47 – 52 GHz
Gain: 25 – 27.2 GHz
Noise figure (25 °C): 3.9 dB
Input return loss: > 11 dB
Output return loss: > 15 dB
Size: 55 mm x 28.5 mm x 33 mm (L x H x W)
Mass: 270 g
The project is divided into 5 tasks:
- Technology Assessment
- Modelling, Characterisation and Preliminary Design
- Detailed Design
- Manufacturing and Test
- Synthesis of Work
The essential milestones in the project are the preliminary design review (PDR) at the end of task 2, the detailed design review (DDR) at the end of task 3, the test review board (TRB) at the end of task 4, and the final review (FR) and the delivery of all the required documentation and hardware at the end of task 5.
A high performance dual redundant low noise amplifier for Q/V band applications has been designed and manufactured, and the project has been successfully completed.