GaN Ka-band HPA for VSAT

Ground Segment

Status

Completed
Status date

2024-08-27
Activity Code

7A.061

Objectives

The final objective of the project is to design, manufacture and test a set of MMIC High Power Amplifiers, in SMT package and European GaN technologies, capable to deliver a saturated output power of 2 and 4 Watts over the frequency range [27 – 31] GHz. Furthermore, the target is also to enable a European Source of Ka-band 2W and 4W HPAs.

The solution in low-cost QFN plastic package makes this solution very attractive for cost and assembly simplification.

This component is intended to be used for new generation of Very Small Aperture Terminals (VSAT), covering both MSS (Mobile Satellite Service) and FSS (Fixed Satellite Service) uplink frequency ranges.

Challenges

The main challenges addressed by the project are:

To obtain these classes of power amplifier in very small MMICs from available European GaN technologies.
To identify the right packaging solution both low-cost and high-frequency.
To define the right trade-off among power, efficiency and linearity, for the optimization of both RF and thermal performance.

Benefits

For next-generation Ka-band satellite communications, Gallium Nitride (GaN) technology is a promising candidate owing to its high power density and high efficiency characteristics. GaN high-power amplifier (HPA) MMICs have been demonstrated for Ka-band applications, and above; the high output power, the high efficiency, the quite good linearity and the compact size of the GaN-based HPA are attractive not only for compact solid state power amplifier (SSPA) and block up converter (BUC) designs for a very small aperture terminal (VSAT), but also for the transmitter design of 5G cellular communications.

Considering this introduction and that the most available solutions are based on non-European technologies, the two HPA demonstrators can be exploited, as full European solution, for the Ka-Band VSAT ground terminals for satellite communications links. Furthermore, looking at the industrialization phase, the two HPAs of 2 and 4 Watts are developed in low-cost 4x4 QFN plastic package solution.

Features

The developed HPAs are capable to deliver 2 and 4 Watts of saturated power, respectively, in the frequency range [27 – 31] GHz, with ACPR levels better than -20 dBc, up to saturation, and -30 dBc, up to 6 dB of back off. The SMT packaged solution allows a terrific simplification of the equipment architecture, that could be based on standard PCB substrate.

System Architecture

The architecture of the amplifier is optimized for the best trade-off among power and thermal performances and dimensions.

Plan

The project is developed on the basis of the following tasks:

Task 1: Analysis of the technology, identification of best architectures for the MMICs and definition of the Baseline Specifications; Identification of optimum package option.
Task 2: Design of first iteration MMICs and relevant test structures; manufacturing and test of components;
Task 3: Detailed design of the MMICs;
Task 4: Manufacturing & Test of the final components.

and through the following Milestones: