PAGE CONTENTS
Objectives
This project raised when GaAs triple junction cells competitiveness was identified with regard to silicon heritage. Objective of this project was consisting in the qualification of building blocks at CIC level and PVA level for GEO application, following PVA ECSS guidelines for 2 configurations of network.
The qualification has been successfully passed for :
- GaAs 3J 28% network based on 3G28 bare cell
- GaAs 3J 30% network based on XTJ Leone bare cell
Challenges
The technical objective of this project was first to qualify CIC and PVA assuming an already available set of qualification tests at bare cell, by-pass and coverglass level, as it was identified at corresponding EQSR. The qualification was doubled and has dealt with two configurations.
Plan
A quick phase 1 has enabled to consolidate the development plan.
Then, phase 2 was initiated to pursue the following activities :
- 3G28 PVA qualification
- TAT for 3G28
- ESD for 3G28
- XTJ Leone PVA qualification
- ESD for XTJ Leone
Compatibility verification of XTJ Leone and 3G30 on alternate substrate
Current Status
The project is now finalized and 16 satellites have benefit from these new PVA developments.
