Description
The objective of this activity is to design, manufacture and test a Ka-band high efficiency amplifier based on silicon technology.
Targeted Improvements: Amplifier power added efficiency above 30% with a noise power ratio of 15 dB minimum enabling highly integrated Ka-band user terminal active antennas.
Description:
The satcom market requires highly integrated solutions for consumer user terminals. Silicon technology allows for the high integration and for high volume production but, until recently, it sufferedfrom limited performance of RF amplifiers at high frequencies in comparison to GaN. The progress of silicon technology has now extended the frequency application towards millimetre-waves and highly efficient RF amplifiers can now be achieved.
In this activity, the adoption of silicon technology for Ka-band user terminal active antennas will be investigated and techniques (such as Doherty) willbe assessed to reach efficiencies of at least 30%. A prototype of a Ka-band highly efficient amplifier will be designed, manufactured and tested.
Procurement Policy C1: Activities in open competition limited to non-Large-System Integrators (LSIs)) as prime. LSIs are allowed to participate as sub-contractors. For additional information please go to EMITS news "Industrial Policy measures for non-primes, SMEs and RD entities in ESA programmes".
Footnote: On Delegation Request activities will only be initiated on the explicit request of at least one National Delegation.