Description
Priority 2: Priority 2 activities will only be initiated on the explicit request ofat least one delegation.
Objective: To design, manufacture and test a Ku-band GaN Low Noise Amplifier.
Targeted Improvements: 1 dB gain on NF, reduced mass at payload level, wider operating temperature.
In conventional Ku-band payloads, the low noise amplifier (LNA) is located at a distance from the antenna feed which translates into distribution network losses hence degrades the overall noise figure (NF) of the receiver. Additionally, a pass-band filter has to be added in front of the LNA to protect it from unwanted signals that may hinder the low noise amplification that relies today on gallium arsenide microwave monolithic integrated circuits (GaAs MMIC).
With the advent of gallium nitride (GaN), it is possible to design more robust LNA MMICs which do not require the pass-band filter at the input hence improving subsequently the NF of the receiver. The filtering is then implemented later in the payload without affecting the NF. Additionally, the GaN MMIC is able to operate in a wider temperature range than its GaAs counterpart which help in bringing the LNA closer to the antenna feed hence further reducing the NF. Finally, this type of LNA will have a favourable mass impact to the payload as part of the waveguide run will be replaced by coaxial cable.
Work Logic
- Review of current implementation;
- Design and test of the RF line-up of Ku-band GaN LNA, based on European space qualified GaN technology;
- Analysis of optimum GaN LNA location;
- Conclusions and way forward.